• G30N60C3 IGBT
      Add to cart
      • G30N60C3 IGBT

      • 225.00
      • ype Designator: G30N60C3 Type of IGBT Channel: N-Channel Maximum Power Dissipation (Pc), W: 208 Maximum Collector-Emitter Voltage |Vce|, V: 600 Collector-Emitter saturation Voltage |Vcesat|, V: 1.8 Maximum Gate-Emitter Voltage |Veg|, V: 20 Maximum Collector Current |Ic|, A: 63 Maximum Junction Temperature (Tj), °C: 150 Rise Time, nS: 40 Package: TO247
    Add to Wishlist
    Add to Wishlist