G30N60C3 IGBT

ype Designator: G30N60C3

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 63

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 40

Package: TO247