K1358

Description

INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vol tage- : VDSS= 900V(Min) ·Fast Switchin g Speed APPLICATIONS ·Designed for hi gh voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS =0) Gate-Source Voltage 900 ±30 Drai n Current-continuous@ TC=25℃ 9 Tota l Dissipation@TC=25℃ 150 Max.
Opera ting Junction Temperature 150 Storage Temperature Range -55~150 V V A W � � ℃ THERMAL CHARACTERISTICS S .